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Other articles related with "InP-based HEMT"：
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18501 |
Zhi-Hang Tong(童志航), Peng Ding(丁芃), Yong-Bo Su(苏永波), Da-Hai Wang(王大海), and Zhi Jin(金智) |
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Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs |
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Chin. Phys. B
2021 Vol.30 (1): 18501-
[Abstract]
(381)
[HTML 1 KB]
[PDF 2201 KB]
(145)
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38502 |
Ying-Hui Zhong(钟英辉), Bo Yang(杨博), Ming-Ming Chang(常明铭), Peng Ding(丁芃), Liu-Hong Ma(马刘红), Meng-Ke Li(李梦珂), Zhi-Yong Duan(段智勇), Jie Yang(杨洁), Zhi Jin(金智), Zhi-Chao Wei(魏志超) |
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Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane |
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Chin. Phys. B
2020 Vol.29 (3): 38502-038502
[Abstract]
(531)
[HTML 1 KB]
[PDF 714 KB]
(141)
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28502 |
Shu-Xiang Sun(孙树祥), Zhi-Chao Wei(魏志超), Peng-Hui Xia(夏鹏辉), Wen-Bin Wang(王文斌), Zhi-Yong Duan(段智勇), Yu-Xiao Li(李玉晓), Ying-Hui Zhong(钟英辉), Peng Ding(丁芃), Zhi Jin(金智) |
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Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs |
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Chin. Phys. B
2018 Vol.27 (2): 28502-028502
[Abstract]
(597)
[HTML 0 KB]
[PDF 1730 KB]
(271)
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108501 |
Shu-Xiang Sun(孙树祥), Hui-Fang Ji(吉慧芳), Hui-Juan Yao(姚会娟), Sheng Li(李胜), Zhi Jin(金智), Peng Ding(丁芃), Ying-Hui Zhong(钟英辉) |
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Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs |
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Chin. Phys. B
2016 Vol.25 (10): 108501-108501
[Abstract]
(710)
[HTML 1 KB]
[PDF 416 KB]
(798)
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